Each dicing method has distinct advantages for different substrate materials, die sizes, and cleanliness requirements. Our engineers recommend the optimal method based on your device.
Standard Blade Dicing, Silicon
Rotating diamond blade dicing for silicon wafers from 4 to 12 inches. The workhorse of MEMS and IC singulation for rectangular dies on standard circular substrates. Automatic wafer map reading enables die-level quality sorting, accepted and rejected dies identified before dicing begins. Kerf width controlled to ±2µm for maximum die yield from expensive wafers. Cooling water spray prevents blade overheating and removes silicon swarf during cutting.
Blade Dicing, Glass & Ceramic
Glass dicing for circular wafers (4–12 inch) and large rectangular panels up to 500×600mm. Quartz, borosilicate, aluminosilicate, and alumina (Al₂O₃) diced with glass-specific blades at lower feed rates than silicon. Thick glass dicing available for glass interposer substrates and MEMS package lids. Large-format glass dicing (300×400mm and 500×600mm) for display substrates, biochip arrays, and panel-level packaging, unique capability not available at standard dicing houses.
Stealth Laser Dicing
A pulsed laser modifies a plane inside the silicon wafer along the dicing streets without breaking the surface or producing any debris. A subsequent tape expand step singulates the dies, completely dry, no water, no dicing debris, no blade contact. Stealth dicing is the only method that preserves optical waveguide facet quality and protects fragile MEMS membranes from water and particle contamination during dicing. Enables polygon-shaped dies (hexagonal, octagonal) impossible with straight-blade dicing. No change in die size limitation, works from sub-millimetre dies to large multi-centimetre dies.
Diamond Scribing
Mechanical scribing with a diamond tip along the dicing street followed by controlled cleaving, the standard singulation method for brittle compound semiconductors that chip or crack under blade dicing contact. SiC, AlN, and InP each have preferential crystallographic cleavage planes that guide the cleave, producing cleaner die edges than blade dicing. Applied to SiC power chips, AlN ceramics, InP photonic dies, and GaAs MMIC chips where blade contact causes micro-cracking at the die edge that degrades electrical isolation and mechanical reliability.