Ion Implantation Services

Ion Implantation Solutions for Advanced Applications

Delve into the forefront of ion implantation technology with Nanosystems JP Inc.  Discover our wide range of ion implantation services tailored to suit your diverse needs:

Versatile Wafer Compatibility

Catering from small wafer sizes & chips to 300mm wafers.

Diverse Temperature & Energy ranges

Benefit from both high and low-temperature implantations, backed with high-energy precision.

Broad Dopant Selection

Choose from a myriad of dopant species, including N, H, O, P, C, As, Ge, Al, Mg, Si, In, Ca, Ba, He, La, Sn, Cl, and more.

Specialized Procedures for Advanced Materials

Avail high-temperature implantation specifically for SiC and GaN, reaching temperatures of up to 600°C.

Custom Simulations

Before diving into the implantation, we provide simulations tailored to your unique requirements, ensuring optimal outcomes.

Power Device Focus

Our implantation processes are expertly optimized for the unique demands of power devices, ensuring peak performance.

High-Concentration Hydrogen Implantation

Harness the benefits of high-energy and high-concentration hydrogen implantation for specialized applications.

Rapid Thermal Annealing (RTA)

Utilize our rapid thermal annealing services, reaching up to 1800°C under Ar and N2 atmospheres.

Carbon Cap Processing

Enhance surface quality with our Carbon Cap processing before high-temperature annealing, ensuring a refined (low rms) surface finish.

Diverse Applications

Our ion implantation services are widely applicable in:

• SiC MOSFET

• GaN HEMT

• IGBT fabrications.

Entrust Nanosystems JP Inc. with your ion implantation needs for assured quality, reliability, and precision. Rely on our expertise for state-of-the-art ion implantation solutions. Contact us today to discuss your specific project requirements and elevate your semiconductor fabrication process.