Etching
Dry Etching
Inductively Coupled Plasma Reactive-Ion Etching (ICP-RIE)
High selectivity
High Etch rate
Low damage
High-aspect structures with vertical profiles
Smooth sidewall nanopattern etching
PZT etching
Applications
GaAs, AlGaAs, InP, GaN, InGaAs (compound Semiconductors) for VCSEL, LED, optoelectronics, lasers
quartz, oxide etching for optical waveguides
SiC etching for power devices
Metals electrodes Pt, Al, Au etching
RIE (Reactive Ion Etching)
Isotropic/ Anisotropic Dry etching
Slow etch rate
Sacrificial etching of Si, Oxides
Cr hard masks
Applications:
etching of thin films of
metals (Au, Al Ti, Pt, etc.)
dielectrics (SiO2, SiN)
Silicon-based Si, polysilicon, amorphous Si
DLC (Diamond-like carbon etching)
Photoresist, NIL resist etching, stripping, ashing, descuming, plasma ashing
DRIE (Deep Reactive Ion Etching)
35:1 aspect ratio etching
High-rate dry etching of Silicon with the Bosch Process
Sidewall angle close to 90°
SiO2 masks
Suitable for TSV (Through-Silicon-Via)
Wet Etching
KOH or TMAH etching
Si, Al, ITO, Au, Cr, Ni, Ti, Cu, etc.
BOE (Buffered Oxide Etch)