Thin Film Deposition & Coating Services
At Nanosystems JP Inc., we offer PVD, CVD, ALD, MBE, PECVD, ion plating, optical coatings, and roll-to-roll deposition. Substrates from small wafers up to 500×600 mm rectangular panels for sputtering, evaporation, and PECVD (ALD and MBE run on wafer formats).
targets available
method families
size (mm)
range
Lift-Off Patterning
PVD sputtering and e-beam evaporation are the deposition methods used in lift-off patterning flows. We offer the full lift-off service - resist, exposure, PVD deposition, and solvent strip - for Au, Pt, TiN, and AuSn multi-layer stacks.
Every deposition method -
one foundry
Most devices need multiple deposition steps, sputtered metal contacts, PECVD dielectric insulation, ALD gate oxide, and MBE epitaxial growth can all be required in the same device. All of these are managed within a single project by a dedicated project manager.
Sputtering, E-beam & Thermal Evaporation
PVD is the backbone of electrode metallization, barrier layer deposition, and functional thin film formation. At Nanosystems JP Inc., we offer over 100 sputtering targets.
Most versatile PVD method. Metals, alloys, ceramics, and transparent conductors. Excellent film uniformity across large substrates. Low substrate temperature.
In-situ reactive gas forms compound films during deposition. Nitrides, oxides, and transparent conductors grown in a single step.
Specialist deposition of functional piezoelectric and ferroelectric thin films. Optimized crystallographic texture for maximum coupling coefficient.
High-purity metal films with low contamination. Excellent for liftoff processing. AuSn solder deposition for UBM flip-chip packaging.
Ion-assisted deposition combines vacuum evaporation with ion bombardment. Outstanding adhesion, density, and hardness. Optical coatings and hard wear layers.
Thermal oxide in an atmospheric furnace: dry oxidation 100-300 nm, wet oxidation 300 nm to 5 µm, wafers to 150 mm in batches of up to 80; thicker SiO₂ by PECVD or TEOS. Low defect density, excellent electrical isolation, and high interface quality for MOS structures.
At Nanosystems JP Inc., we offer deposition
from single chips to 500×600mm panels
Circular wafers and large rectangular substrates are both supported for sputtering, evaporation, and PECVD. Moving from wafer prototypes to panel production is managed as one project by your dedicated project manager, with route-specific process transfer confirmed at engineering review.
(Si, GaAs, SiC...)
glass / polymer panel
(angstroms to microns)
lots available
PECVD, LPCVD & LTPS
CVD methods grow films from gas-phase precursors, enabling conformal coverage of complex 3D structures, trench sidewalls, via liners, and MEMS cavities, that PVD cannot reach. PECVD operates at low temperature, compatible with completed device structures and flexible substrates. LPCVD delivers high-quality polycrystalline silicon, silicon nitride, and deposited oxide films (thermal oxide is grown separately by oxidation).
Low-temperature dielectric and semiconductor film deposition. RF plasma activates precursors below 400°C, compatible with BEOL processing and polymer substrates.
Low-temperature, low-stress SiN specially optimized for optical waveguide applications. Tunable refractive index and stress. Minimal absorption for waveguide propagation loss.
High-temperature, high-quality films with superior step coverage and uniformity. The standard for polysilicon gates, sacrificial layers, and deposited oxide liners in MEMS and semiconductor devices.
Crystalline silicon at low process temperatures. Enables TFT backplanes for displays and sensors on glass. Higher carrier mobility than amorphous silicon.
Hard, chemically inert carbon coating by PECVD. Extreme hardness, wear resistance, and low friction. Applied to MEMS wear surfaces, cutting tools, and biomedical implants.
N-doped, P-doped, and undoped a-Si:H. Used in thin-film solar cells, flat-panel detectors, TFTs, and as sacrificial layers in MEMS surface micromachining.
ALD, Sub-nm Precision,
Near-ideal Conformality
ALD uses sequential, self-limiting surface reactions. Growth per cycle depends on the material and process and is commonly a fraction of a monolayer, which gives three properties that are hard to reach with other methods: sub-nanometer thickness control, near-ideal step coverage into deep trenches and vias on qualified geometries, and dense, continuous films. These make ALD the method of choice for gate dielectrics, passivation layers on compound semiconductors, and moisture barrier coatings.
Most widely deposited ALD material. Gate dielectric for GaN HEMTs, passivation for GaAs/InP surfaces, moisture barrier for OLED displays and flexible electronics.
Conformal insulating layers for MEMS capacitors, via liners, and gate dielectrics. Superior step coverage vs PECVD into deep trenches and aspect ratios >10:1.
High refractive index optical coatings, photocatalytic surfaces, and high-k dielectric applications. Used in optical interference filters and anti-reflection systems.
High-k gate dielectric for advanced transistor nodes and DRAM capacitor dielectrics. Chemical stability and high dielectric constant (ε≈25) make it a key high-k material.
Near-ideal conformality into 3D structures (a fraction of a monolayer per self-limiting cycle). Sub-nm thickness control. Dense, continuous films. Low process temperature (80-300°C). Ultra-thin (<5nm) layers with defined composition.
GaN HEMT gate dielectric, GaAs/InP surface passivation, high-k MOSFET gate, MEMS wear coating, OLED encapsulation, TSV liner, memory capacitor dielectric.
MBE & Epitaxial Growth
MBE is the highest-precision deposition technique, atoms are delivered one layer at a time under ultra-high vacuum with real-time RHEED monitoring of crystal growth. This gives atomically sharp heterointerfaces, precise doping profiles, and strain-engineered quantum wells that are impossible to achieve by any other method. Essential for III-V photonic and power devices, and for research-grade quantum structures.
GaN and AlGaN epilayer growth for HEMT, LED, and power device structures. Precise control of Al composition, doping, and interface quality. MOCVD or MBE routes available.
Aluminum nitride epitaxial layers for deep-UV LEDs, SAW/BAW resonators, and AlGaN/GaN HEMT buffer layers. High crystalline quality on SiC and Si substrates.
Ion-beam assisted evaporation for high-quality optical coatings. Dense, hard, and stress-controlled films with precisely controlled refractive index and low scatter.
Roll-to-Roll Film &
Foil Deposition
Roll-to-roll deposition is our unique capability for large-area, flexible, and high-volume coating on continuous web substrates. Metal foils and polymer films pass through the deposition zone continuously, enabling cost-effective production of transparent electrodes, battery anodes, flexible sensors, and solar cell precursors at scales no batch wafer system can match.
Deposition on PET, Polyimide (Kapton), and Polycarbonate films. Sputtered ITO for flexible touch screens. Metal coatings for flexible sensors and heaters.
Coating on aluminum, copper, and steel foils. Silicon (amorphous) on copper foil as anode material for lithium-ion batteries, a growing market for flexible energy storage.
Metals, alloys, transparent conductors, oxides, nitrides and carbon films by sputtering, reactive sputtering and evaporation on continuous web. Pick any of these in the material library above to see its full route list.
Explore by material
Search by element, compound, or application, or pick an element from the periodic table to see the films that contain it. Each entry lists the deposition routes we run for it.
Full material list as text (145 entries)
| Material | Name | Deposition routes | Typical use |
|---|---|---|---|
| Al | Aluminum | Sputtering, E-beam evaporation, Thermal evaporation, Roll-to-roll | Interconnect, mirror coatings, bond pads |
| Ag | Silver | Sputtering, E-beam evaporation, Thermal evaporation, Roll-to-roll | Reflectors, high-conductivity layers |
| Au | Gold | Sputtering, E-beam evaporation, Thermal evaporation, Electroplating / electroless, Roll-to-roll | Bond pads, UBM finish, bumps, wire bonding |
| B | Boron | Sputtering | Doping source layers, neutron detection |
| Bi | Bismuth | Sputtering, Thermal evaporation | Thermoelectric layers |
| C | Carbon | Sputtering, PECVD | Hard masks, conductive carbon, DLC base |
| Co | Cobalt | Sputtering, Electroplating / electroless | Magnetic layers, silicide precursor |
| Cr | Chromium | Sputtering, E-beam evaporation, Thermal evaporation, Roll-to-roll | Adhesion layers, photomask absorber |
| Cu | Copper | Sputtering, E-beam evaporation, Electroplating / electroless, Roll-to-roll | Seed and thick interconnect, TSV and RDL fill |
| Fe | Iron | Sputtering | Magnetic and alloy layers |
| Ge | Germanium | E-beam evaporation, Sputtering | IR optics, Al-Ge eutectic bonding |
| Hf | Hafnium | Sputtering | High-k precursor, barrier layers |
| In | Indium | E-beam evaporation, Thermal evaporation, Electroplating / electroless, Roll-to-roll | Cryogenic bumps, low-temperature joints |
| Ir | Iridium | Sputtering | Electrodes, SIROF precursor |
| Mg | Magnesium | Thermal evaporation, Sputtering | Optical and getter layers |
| Mn | Manganese | Sputtering | Barrier and alloy layers |
| Mo | Molybdenum | Sputtering, Roll-to-roll | Back contacts, electrodes, hard masks |
| Nb | Niobium | Sputtering, E-beam evaporation, Roll-to-roll | Superconducting layers, electrodes |
| Ni | Nickel | Sputtering, E-beam evaporation, Electroplating / electroless, Roll-to-roll | UBM, diffusion barrier, electroforming |
| Pb | Lead | E-beam evaporation | High-Pb solder bumps for hi-rel programs |
| Pd | Palladium | Sputtering, Electroplating / electroless | ENEPIG finish, contact layers |
| Pt | Platinum | Sputtering, E-beam evaporation, Roll-to-roll | Electrodes, sensors, high-temperature contacts |
| Re | Rhenium | Sputtering | High-temperature electrodes |
| Rh | Rhodium | Sputtering, Electroplating / electroless | Reflective and contact finishes |
| Ru | Ruthenium | Sputtering, ALD | Liner and electrode layers |
| Sb | Antimony | Thermal evaporation | Thermoelectric layers |
| Si | Silicon | Sputtering, E-beam evaporation, LPCVD, PECVD, Roll-to-roll | Doped and high-resistivity Si films, sacrificial layers |
| Sn | Tin | E-beam evaporation, Thermal evaporation, Electroplating / electroless, Roll-to-roll | Solder alloys, SnAg bumps |
| Ta | Tantalum | Sputtering | Barrier layers for copper, capacitors |
| Ti | Titanium | Sputtering, E-beam evaporation, Roll-to-roll | Adhesion layer in nearly every stack |
| V | Vanadium | Sputtering | Alloy and oxide precursor layers |
| W | Tungsten | Sputtering, Roll-to-roll | Plugs, hard masks, X-ray absorbers |
| Y | Yttrium | Sputtering | YSZ and oxide precursor |
| Zn | Zinc | Sputtering, Thermal evaporation, Roll-to-roll | ZnO precursor, sacrificial layers |
| Zr | Zirconium | Sputtering | Barrier layers, oxide precursor |
| Al-Cu | Aluminum-copper 99.5:0.5 wt% | Sputtering | Electromigration-resistant interconnect |
| Al-Si | Aluminum-silicon 99:1 wt% | Sputtering | Contact metal with spiking suppression |
| Al-Si-Cu | Aluminum-silicon-copper 98.5:1:0.5 wt% | Sputtering | Interconnect for legacy CMOS flows |
| Al-Nd | Aluminum-neodymium 98:2 at% | Sputtering | Display gate metal with hillock suppression |
| Al-Sc | Aluminum-scandium 99.9:0.1 wt% | Sputtering | Thermally stable aluminum layers |
| Al-Ti | Aluminum-titanium 99.5:0.5 wt% | Sputtering | Barrier-integrated aluminum |
| TiW | Titanium-tungsten 10:90 wt% | Sputtering | Diffusion barrier and UBM base |
| Ni-Cr | Nickel-chromium 80:20 wt% | Sputtering | Thin-film resistors and heaters |
| Ni-Cr-Si | Nickel-chromium-silicon 40:40:20 wt% | Sputtering | Precision thin-film resistors |
| Ni-Fe | Nickel-iron permalloy 80:20 wt% | Sputtering, Electroplating / electroless | Magnetic cores and shields |
| Ni-V | Nickel-vanadium 93:7 wt% | Sputtering | Non-magnetic nickel barrier |
| Cu-Ni | Copper-nickel 96:4 and 94:6 wt% | Sputtering | Resistive and thermal-sensor layers |
| Cu-Cr | Copper-chromium 92:8 to 96:4 wt% | Sputtering | Adhesion-enhanced copper layers |
| Co-Cr | Cobalt-chromium 85:15 wt% | Sputtering | Magnetic recording layers |
| Co-Ni | Cobalt-nickel 80:20 wt% | Sputtering, Electroplating / electroless | Magnetic and electroformed structures |
| Fe-Co | Iron-cobalt 70:30 at% | Sputtering | High-moment magnetic layers |
| MoNb | Molybdenum-niobium | Sputtering | Display electrode metal |
| APC | Silver alloy reflector (APC type) | Sputtering | High-reflectivity display electrodes |
| NiP | Electroless nickel-phosphorus | Electroplating / electroless | ENIG and ENEPIG UBM base |
| AuSn 80/20 | Gold-tin eutectic solder | E-beam evaporation, Sputtering, Electroplating / electroless | Hermetic die attach, photonics |
| AuSn 70/30 | Gold-tin off-eutectic | E-beam evaporation, Sputtering | Tailored melting behavior |
| SnAg 96.5/3.5 | Tin-silver solder | Electroplating / electroless | Microbumps and Cu pillar caps |
| 95Pb/5Sn | High-lead solder | E-beam evaporation | Hi-rel and space programs |
| Indium bumps | Indium bumps | E-beam evaporation, Thermal evaporation, Electroplating / electroless | Cryogenic and IR detector bonding |
| AuGe | Gold-germanium eutectic | E-beam evaporation | Ohmic contacts and die attach |
| AuSi | Gold-silicon eutectic | E-beam evaporation | Die attach on silicon |
| Al₂O₃ | Aluminum oxide | ALD, Reactive sputtering, IBAD / ion plating, Roll-to-roll | Barrier, dielectric, optical layers |
| SiO₂ | Silicon oxide | PECVD, LPCVD, ALD, Thermal oxidation, Reactive sputtering, Roll-to-roll | Dielectric, passivation, hard mask |
| SiO | Silicon monoxide | Thermal evaporation | Optical and protective coatings |
| TiO₂ | Titanium oxide | ALD, Reactive sputtering, IBAD / ion plating, Roll-to-roll | High-index optical films, photocatalysis |
| Ta₂O₅ | Tantalum oxide | Reactive sputtering, IBAD / ion plating, ALD, Roll-to-roll | Optical coatings, capacitors |
| HfO₂ | Hafnium oxide | ALD, Reactive sputtering | High-k dielectric |
| ZrO₂ | Zirconium oxide | ALD, Reactive sputtering | Thermal barrier and dielectric |
| YSZ | Yttria-stabilized zirconia | Sputtering | Buffer layers, solid electrolytes |
| Nb₂O₅ | Niobium oxide | Reactive sputtering, IBAD / ion plating, Roll-to-roll | Optical multilayers |
| Y₂O₃ | Yttrium oxide | Reactive sputtering, IBAD / ion plating | Plasma-resistant and optical coatings |
| MgO | Magnesium oxide | Sputtering | Tunnel barriers, buffer layers |
| ZnO | Zinc oxide | Reactive sputtering, ALD, Roll-to-roll | Piezoelectric and TCO layers |
| WO₃ | Tungsten oxide | Reactive sputtering | Electrochromic layers |
| V₂O₅ / VO₂ | Vanadium oxides | Reactive sputtering | Thermochromic and bolometer layers |
| NiO | Nickel oxide | Reactive sputtering | Hole transport, resistive switching |
| CuO / Cu₂O | Copper oxides | Reactive sputtering | Photovoltaic and sensing layers |
| Fe₂O₃ | Iron oxide | Reactive sputtering | Magnetic and catalytic films |
| Mn₂O₃ | Manganese oxide | Reactive sputtering | Battery and catalytic layers |
| Ga₂O₃ | Gallium oxide | Reactive sputtering, ALD | Wide-bandgap power devices, UV |
| Gd₂O₃ | Gadolinium oxide | Reactive sputtering | High-k and optical layers |
| CeO₂ | Cerium oxide | Reactive sputtering | Buffer layers, polishing films |
| In₂O₃ | Indium oxide | Reactive sputtering | Transparent conductive base |
| SnO / SnO₂ | Tin oxides | Reactive sputtering, Roll-to-roll | Transparent conductors, gas sensors |
| RuO₂ | Ruthenium oxide | Reactive sputtering | Electrodes and resistors |
| SrTiO₃ | Strontium titanate | Sputtering | Epitaxial buffer, high-k |
| SrRuO₃ | Strontium ruthenate | Sputtering | Conductive oxide electrodes |
| BaTiO₃ | Barium titanate | Sputtering | Ferroelectric capacitors |
| LiNbO₃ | Lithium niobate | Sputtering | Acoustic and photonic films |
| LiCoO₂ / LiMn₂O₄ | Lithium battery cathode films | Sputtering | Thin-film battery cathodes |
| Li₃PO₄ | Lithium phosphate | Sputtering | LiPON precursor |
| CrSiO | Chromium silicon oxide | Sputtering | Thin-film resistors |
| TaSiO₂ | Tantalum silicon oxide | Sputtering | Precision resistor films |
| ITO | Indium tin oxide 90:10 wt% | Reactive sputtering, Sputtering, Roll-to-roll | Touch panels, displays, heaters |
| IZO | Indium zinc oxide 90:10 wt% | Reactive sputtering, Sputtering, Roll-to-roll | Flexible transparent electrodes |
| AZO | Aluminum-doped zinc oxide | Reactive sputtering, Sputtering, Roll-to-roll | ITO-free transparent conductor |
| GZO | Gallium-doped zinc oxide | Reactive sputtering, Sputtering, Roll-to-roll | Transparent conductive layers |
| IGZO | Indium gallium zinc oxide | Sputtering, Roll-to-roll | Oxide TFT backplanes |
| FTO | Fluorine-doped tin oxide | Reactive sputtering, Roll-to-roll | Photovoltaic and electrochemical electrodes |
| Si₃N₄ / SiN | Silicon nitride | PECVD, LPCVD, Reactive sputtering, Roll-to-roll | Passivation, hard mask, membranes |
| SiON | Silicon oxynitride | PECVD | Tuned index and stress layers |
| SiCN | Silicon carbonitride | PECVD | Low-k barrier and etch-stop capping layers |
| TiN | Titanium nitride | Reactive sputtering, ALD, Roll-to-roll | Barrier, electrode, hard coating |
| TaN | Tantalum nitride | Reactive sputtering, ALD | Copper barrier, thin-film resistors |
| AlN | Aluminum nitride | Reactive sputtering, Epitaxy, Roll-to-roll | Piezoelectric layers, heat spreading |
| BN | Boron nitride | Sputtering | Dielectric and release layers |
| ZrN | Zirconium nitride | Reactive sputtering | Hard and decorative coatings |
| CrN / Cr₂N | Chromium nitrides | Reactive sputtering, Roll-to-roll | Wear-resistant coatings |
| Mo₂N | Molybdenum nitride | Reactive sputtering | Barrier and catalytic layers |
| WN | Tungsten nitride | Reactive sputtering, ALD | Diffusion barrier |
| GaN | Gallium nitride | Epitaxy | RF and power devices, LEDs |
| AlGaN | Aluminum gallium nitride | Epitaxy | HEMT barrier layers, UV |
| InGaN | Indium gallium nitride | Epitaxy | Visible LED active layers |
| SiC | Silicon carbide | Sputtering, LPCVD | Hard coatings, wide-bandgap layers |
| TiC | Titanium carbide | Sputtering | Wear-resistant coatings |
| WC | Tungsten carbide | Sputtering | Hard and tribological coatings |
| DLC | Diamond-like carbon | PECVD, Sputtering, Roll-to-roll | Low-friction protective coatings |
| TiSi₂ | Titanium silicide | Sputtering | Low-resistance contacts |
| WSi₂ | Tungsten silicide | Sputtering | Gate and interconnect layers |
| CoSi₂ | Cobalt silicide | Sputtering | Salicide contacts |
| NiSi₂ / NiPtSi | Nickel and nickel-platinum silicide | Sputtering | Advanced salicide contacts |
| MoSi₂ | Molybdenum silicide | Sputtering | High-temperature electrodes |
| TaSi₂ | Tantalum silicide | Sputtering | Refractory interconnect |
| ZrSi₂ | Zirconium silicide | Sputtering | Refractory layers |
| CrSi₂ | Chromium silicide | Sputtering | Thin-film resistors |
| MgF₂ | Magnesium fluoride | IBAD / ion plating, E-beam evaporation | Anti-reflection coatings |
| CaF₂ | Calcium fluoride | IBAD / ion plating, E-beam evaporation | UV and IR optics |
| LaF₃ | Lanthanum fluoride | E-beam evaporation | UV optical multilayers |
| SiO₂/TiO₂ stacks | Dielectric mirror stacks | IBAD / ion plating, Reactive sputtering | Bandpass filters, mirrors, AR coatings |
| Poly-Si | Polysilicon | LPCVD | MEMS structural and gate layers |
| a-Si | Amorphous silicon | LPCVD, PECVD, Roll-to-roll | Sacrificial layers, TFT |
| a-Si:H | Hydrogenated amorphous silicon | PECVD | Photoconductive and PV layers |
| SiGe | Silicon germanium | LPCVD, Epitaxy | Strained channels, thermoelectrics |
| Ge | Germanium films | E-beam evaporation, Epitaxy | IR detectors and optics |
| GaAs / InP | III-V epitaxial layers | Epitaxy | RF, photonic and detector devices |
| PZT | Lead zirconate titanate | Sputtering | Piezoelectric actuators and sensors |
| KNN | Potassium sodium niobate | Sputtering | Lead-free piezoelectric films |
| KTN | Potassium tantalate niobate | Sputtering | Electro-optic films |
| SIROF | Sputtered iridium oxide film | Reactive sputtering | Neural and bioelectrode coatings |
| LiPON | Lithium phosphorus oxynitride | Reactive sputtering | Solid electrolyte for thin-film batteries |
| NiTi | Nickel-titanium shape memory | Sputtering | MEMS actuators |
| Permalloy | Magnetic permalloy films | Sputtering, Electroplating / electroless | Magnetic shielding and cores |
| Polyimide | Polyimide | Spin coat | Dielectric and flexible layers |
| BCB | Benzocyclobutene | Spin coat | Low-k bonding and dielectric |
| PTFE-like | Fluoropolymer coating | Sputtering, PECVD, Roll-to-roll | Hydrophobic and release coatings |
Every film we deposit -
method and application
This is the full material list from our live capabilities. If you don't see your material, contact us, we can often accommodate custom targets and precursors.
| Category | Materials | Method | Key Applications |
|---|---|---|---|
| Standard Metals | AlAuAgPtCrCuNiRuIrZrTaWRhRe |
Sputtering / E-beam / Thermal | Contacts, electrodes, interconnects, seed layers, hard masks |
| Barrier & Adhesion Layers | TiNTaNTiWSiNTiTiO₂ |
Reactive sputtering | Cu diffusion barrier, adhesion promotion, BEOL metallization |
| Functional films (piezoelectric, electrode, solid electrolyte) | PZTKNNAlNKTN SIROF (electrode coating)LiPON (solid electrolyte) |
RF magnetron sputtering | MEMS actuators, BAW resonators, energy harvesters, solid-state batteries |
| Transparent Conductors | ITOAZOGZO |
Reactive sputtering / R2R | Touch panels, solar cells, OLED anodes, flexible electronics |
| ALD Oxides | Al₂O₃SiO₂TiO₂ZrO₂ |
ALD | Gate dielectric, GaN passivation, OLED barrier, TSV liner, high-k |
| CVD Dielectrics | SiO₂SiNSiONSiCNTEOSPSGNSGLTO |
PECVD / LPCVD | Interlayer dielectric, isolation, passivation, etch mask, waveguide cladding |
| CVD Silicon | Poly-Sia-Sia-Si:H (N/P/undoped)LTPS |
LPCVD / PECVD | MEMS sacrificial layer, gate material, TFT, photovoltaic, Li battery anode |
| Optical Coatings | MgF₂Ta₂O₅Al₂O₃ |
IBAD / ion plating | Anti-reflection, HR mirrors, bandpass filters, AR coatings for optics |
| Epitaxial III-N | GaNAlNAlGaNInGaN |
MBE / MOCVD | HEMT, LED, deep-UV LED, laser, power device epilayers |
| AuSn Solder | AuSn (80/20)UBM stack |
Thermal / E-beam (layered) | Flip-chip bonding, hermetic sealing, die attach for PIC/photonics |
| DLC & Carbon | DLCa-C:Hta-C |
PECVD | MEMS wear layers, hard coatings, tribological films, biomedical |
| Specialty Films | SiRiNLiPON (solid electrolyte)Thermal SiO₂ |
Sputtering / Thermal oxidation | Waveguide, solid-state battery electrolyte, MOS gate quality SiO₂ |
Industries served by
our deposition capabilities
Silicon Photonics & Optics
Low-stress PECVD SiN waveguides, SiO₂ cladding, ALD gate oxide, optical interference coatings (MgF₂/Ta₂O₅) for WDM filters and AR coatings.
LED & Laser Diodes
GaN/AlGaN epitaxy for HEMT and LED structures. ITO transparent electrode. AuSn solder for die bonding. Metal contact deposition (Ti/Pt/Au, Ni/Au).
Power Devices, SiC & GaN
ALD Al₂O₃ gate dielectric on GaN HEMT. Thermal SiO₂ on SiC MOSFETs. TiN/TaN diffusion barriers. Ohmic contact metallization (Ti/Al/Ni/Au).
MEMS Sensors & Actuators
PZT piezoelectric by RF sputtering, LPCVD poly-Si structural layers, PECVD SiN hard mask, sacrificial oxide, metal electrode patterning for inertial and pressure sensors.
RF / 5G Filters (BAW/SAW)
AlN piezoelectric layer by reactive sputtering for bulk acoustic wave (BAW) resonators and filters. Precisely controlled film stress and crystallographic texture for maximum coupling.
Thin Film Deposition Batteries & Energy
LiPON solid electrolyte by sputtering, a-Si anode on Cu foil (roll-to-roll), cathode films. Compact energy storage for wearables, IoT, and smart cards.
Display & Touch
ITO transparent conductor on glass or PET (roll-to-roll), LTPS TFT backplane deposition, anti-reflection optical coatings for display glass.
Biomedical & Implants
DLC hard biocompatible coating on implant surfaces. SIROF stimulation electrode for neural interfaces. Pt/Ir and TiN for biosensors and cardiac pacemaker leads.
Aerospace & Thermal
Thermal barrier coatings, wear-resistant DLC and hard metal films, optical coatings for space optics, and corrosion-resistant barrier films for harsh environments.
The depth behind
"100+ materials"
At Nanosystems JP Inc., we offer over 100 sputtering targets and the process knowledge to hit your target properties: resistivity, stress, refractive index, and crystallographic texture, on the first or second run, not the tenth.
Every deposition method
PVD, CVD, ALD, MBE, IBAD, thermal oxidation, and roll-to-roll, all available in one coordinated process flow. Your process flow doesn't need to split across separate process steps for different deposition methods.
Piezoelectric specialist
PZT, AlN, KNN, and LiNbO₃ deposition with orientation control, a capability that distinguishes us from general-purpose foundries. We serve MEMS transducer and BAW filter customers specifically.
Large panel capability
500×600mm rectangular substrates in the same sputtering system as standard wafers. Scale your process from 4-inch wafer R&D to glass-panel production without changing foundry.
Full patterning integration
Deposition is often followed immediately by photolithography, etching, and liftoff. All coordinated. We quote and manage the full sequence, not just the deposition step in isolation.
AuSn solder for photonics packaging
AuSn (80/20) UBM deposition by layered thermal evaporation, a specialist capability for silicon photonics flip-chip assembly that most MEMS foundries don't offer.
PVD, ALD, MBE,
side by side
Three ways atoms reach a wafer on this line: by line of sight, by self-limiting cycles, and by epitaxy in UHV.
Thin film deposition on
optical-grade fused silica
Fused silica (SiO₂) is a preferred substrate for precision optical coatings and photonic thin film processes. Its broad UV-to-IR transmission window, ultra-low thermal expansion, and chemical stability make it well-suited for deposition processes where substrate outgassing, thermal distortion, or optical interference would compromise film performance.
AR & HR Coatings
Anti-reflection and high-reflection multilayer stacks deposited on fused silica using PVD (e-beam evaporation or ion-beam sputtering). Applied to optical windows, laser output couplers, and photomask blanks where wavelength-specific reflectance control is critical.
Conductive & Functional Films
ITO, metal, and dielectric films on fused silica for electrooptic devices, biosensors, and RF substrates. The low dielectric loss and high chemical purity of optical-grade fused silica minimizes substrate-induced interference in functional film characterization.
TGV Wafer Preparation
Barrier seed layers, metal fill preparation, and dielectric liner films deposited on fused silica wafers prior to or after TGV drilling. We coordinate substrate supply, TGV formation, and thin film steps as a single project engagement.
🟣 Flexible & metallic substrates: PVD thin film deposition is also available on polyimide (PI) film and thin SUS stainless steel - enabling direct deposition of thermocouple alloys, RTD metals, and sensor structures on flexible and metallic substrates.
PI Film & SUS Sensor Fab →Dedicated pages that start from this process
Conformal films for via liners, gate dielectrics and passivation, with the full material and thickness ranges.
SiO₂, SiN, SiON and a-Si with stress and index tuning, at temperatures a finished device tolerates.
Start your project.
Initial response within one business day.
Share your process requirements, substrate, and production volume. A Nanosystems JP Inc. engineer will give an initial response within one business day. Full quote typically within 7-10 business days, subject to project complexity and NDA requirements.